npn silicon planar medium power transistors issue 2 ? july 94 features * 100 volt v ceo * 2 amp continuous current * low saturation voltage *p tot =1 watt absolute maximum ratings. parameter symbol ZTX652 ztx653 unit collector-base voltage v cbo 100 120 v collector-emitter voltage v ceo 80 100 v emitter-base voltage v ebo 5v peak pulse current i cm 6a continuous collector current i c 2a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX652 ztx653 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 100 120 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 80 100 v i c =10ma* emitter-base breakdown voltage v (br)ebo 55v i e =100 m a collector cut-off current i cbo 0.1 10 0.1 10 m a m a m a m a v cb =80v v cb =100v v cb =80v, t amb =100c v cb =100v, t amb =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.13 0.23 0.3 0.5 0.13 0.23 0.3 0.5 v v i c =1a, i b =100ma* i c =2a, i b =200ma* base-emitter saturation voltage v be(sat) 0.9 1.25 0.9 1.25 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 0.8 1 0.8 1 v ic=1a, v ce =2v* ZTX652 ztx653 3-223 c b e e-line to92 compatible electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX652 ztx653 unit conditions. min. typ. max. min. typ. max. transition frequency f t 140 175 140 175 mhz i c =100ma, v ce =5v f=100mhz switching times t on 80 80 ns i c =500ma, v cc =10v i b1 =i b2 =50ma t off 1200 1200 ns output capacitance c obo 30 30 pf v cb =10v f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX652 ztx653 -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-222
npn silicon planar medium power transistors issue 2 ? july 94 features * 100 volt v ceo * 2 amp continuous current * low saturation voltage *p tot =1 watt absolute maximum ratings. parameter symbol ZTX652 ztx653 unit collector-base voltage v cbo 100 120 v collector-emitter voltage v ceo 80 100 v emitter-base voltage v ebo 5v peak pulse current i cm 6a continuous collector current i c 2a power dissipation at t amb =25c derate above 25c p tot 1 5.7 w mw/c operating and storage temperature range t j :t stg -55 to +200 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX652 ztx653 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 100 120 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 80 100 v i c =10ma* emitter-base breakdown voltage v (br)ebo 55v i e =100 m a collector cut-off current i cbo 0.1 10 0.1 10 m a m a m a m a v cb =80v v cb =100v v cb =80v, t amb =100c v cb =100v, t amb =100c emitter cut-off current i ebo 0.1 0.1 m a v eb =4v collector-emitter saturation voltage v ce(sat) 0.13 0.23 0.3 0.5 0.13 0.23 0.3 0.5 v v i c =1a, i b =100ma* i c =2a, i b =200ma* base-emitter saturation voltage v be(sat) 0.9 1.25 0.9 1.25 v i c =1a, i b =100ma* base-emitter turn-on voltage v be(on) 0.8 1 0.8 1 v ic=1a, v ce =2v* ZTX652 ztx653 3-223 c b e e-line to92 compatible electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol ZTX652 ztx653 unit conditions. min. typ. max. min. typ. max. transition frequency f t 140 175 140 175 mhz i c =100ma, v ce =5v f=100mhz switching times t on 80 80 ns i c =500ma, v cc =10v i b1 =i b2 =50ma t off 1200 1200 ns output capacitance c obo 30 30 pf v cb =10v f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% thermal characteristics parameter symbol max. unit thermal resistance: junction to ambient 1 junction to ambient 2 junction to case r th(j-amb)1 r th(j-amb)2 ? r th(j-case) 175 116 70 c/w c/w c/w ? device mounted on p.c.b. with copper equal to 1 sq. inch minimum. ZTX652 ztx653 -40 0.0001 derating curve t -temperature (c) m ax po we r d issipati o n - ( w a tts) maximum transient thermal impedance pulse width (seconds) thermal resistance (c/w) 10 100 1 0.1 0.01 -20 0 20 40 60 80 100 120 200 180 160 140 0.001 0 100 200 d=0.2 d=0.1 single pulse d=0.5 t 1 t p d=t 1 /t p 1.0 0.5 2.0 1.5 case temperature 2.5 ambient temperat ure 0 d=1 (d.c.) 3-222
ZTX652 ztx653 typical characteristics v ce(sat) v i c i c - collector current (amps) v ce ( sa t ) - (v olts) i c - collector current (amps) v ce - collector voltage (volts) safe operating area 1 10 100 0.01 0.1 1 10 single pulse test at t amb =25c d.c. 1s 100ms 10ms 1.0ms 100s 0.01 0.1 10 1 i c - collector current (amps) v be(sat) v i c v be ( s at) - (v olts) i c - collector current (amps) h fe v i c h fe - gain 0.01 10 0.1 1 v ce =2v 0.6 0.8 1.0 1.2 i c - collector current (amps) v be(on) v i c v b e - ( v o lts ) switching speeds i c - collector current (amps) switching time 0.1 1 i b1 =i b2 =i c /10 0.01 ts tf td tr ts ns 125 175 225 75 0.6 0.8 1.0 1.2 0.4 zt x 6 5 2 0 0.1 0.2 0.4 0.5 0.3 0.6 0.001 0.0001 i c /i b =10 1.4 0.01 10 0.1 1 0.0001 0.001 i c /i b =10 0.01 10 0.1 1 0.0001 0.001 v ce =2v 0 td tr tf ns 200 240 80 40 120 160 280 0 2000 2400 800 400 1200 1600 2800 0.1 zt x 6 5 3 25 3-224
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